Surface engineering to achieve organic ternary memory with a high device yield and improved performance. Issue 3 (5th January 2017)
- Record Type:
- Journal Article
- Title:
- Surface engineering to achieve organic ternary memory with a high device yield and improved performance. Issue 3 (5th January 2017)
- Main Title:
- Surface engineering to achieve organic ternary memory with a high device yield and improved performance
- Authors:
- Hou, Xiang
Xiao, Xin
Zhou, Qian-Hao
Cheng, Xue-Feng
He, Jing-Hui
Xu, Qing-Feng
Li, Hua
Li, Na-Jun
Chen, Dong-Yun
Lu, Jian-Mei - Abstract:
- Abstract : Organic memories fabricated on surface-engineered indium tin oxide show the highest ternary yield (82%) to date and better performance. Abstract : Squaraine molecules deposited on indium tin oxide (ITO) substrates modified with phosphonic acids crystalize more orderly than do those on untreated ITO. The as-fabricated electro-resistive memories show the highest ternary device yield observed to date (82%), a narrower switching voltage distribution, and better retention as well as resistance uniformity.
- Is Part Of:
- Chemical science. Volume 8:Issue 3(2017)
- Journal:
- Chemical science
- Issue:
- Volume 8:Issue 3(2017)
- Issue Display:
- Volume 8, Issue 3 (2017)
- Year:
- 2017
- Volume:
- 8
- Issue:
- 3
- Issue Sort Value:
- 2017-0008-0003-0000
- Page Start:
- 2344
- Page End:
- 2351
- Publication Date:
- 2017-01-05
- Subjects:
- Chemistry -- Periodicals
540.5 - Journal URLs:
- http://pubs.rsc.org/en/Journals/JournalIssues/SC ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/c6sc03986c ↗
- Languages:
- English
- ISSNs:
- 2041-6520
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 3151.490000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 1149.xml