Bright Room‐Temperature Single‐Photon Emission from Defects in Gallium Nitride. Issue 12 (9th February 2017)

• Record Type: Journal Article
• Authors: Berhane, Amanuel M.; Jeong, Kwang‐Yong; Bodrog, Zoltán; Fiedler, Saskia; Schröder, Tim; Triviño, Noelia Vico; Palacios, Tomás; Gali, Adam; Toth, Milos; Englund, Dirk; Aharonovich, Igor
• Is Part Of: Advanced materials. Volume 29:Issue 12(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-02-09
• Subjects: cubic inclusions -- gallium nitride wafer -- narrow linewidth -- point defects -- single‐photon sources; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201605092
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Room‐temperature quantum emitters in gallium nitride (GaN) are reported. The emitters originate from cubic inclusions in hexagonal lattice and exhibit narrowband luminescence in the red spectral range. The sources are found in different GaN substrates, and therefore are promising for scalable quantum technologies.