An approach for correlating the structural and electrical properties of Zr4+-modified SrBi4Ti4O15/SBT ceramic. Issue 27 (14th March 2017)

• Record Type: Journal Article
• Authors: Nayak, Priyambada; Badapanda, Tanmaya; Singh, Anil Kumar; Panigrahi, Simanchalo
• Is Part Of: RSC advances. Volume 7:Issue 27(2017)
• Page Start: 16319
• Page End: 16331
• Publication Date: 2017-03-14
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c7ra00366h
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : In the present work, zirconium (Zr) modified strontium bismuth titanate (SBT) ceramics were prepared by soild state reaction route and its effects on the structural and electrical properties were thoroughly investigated. Abstract : In the present work, B-site modified layer-structured strontium bismuth titanate (SBT) ceramics with the nominal formula SrBi4 Ti4− x Zr x O15 were prepared by solid state reaction route and the tailoring effects of zirconium (Zr) were investigated thoroughly. The X-ray diffraction analysis shows that the substitution leads to the formation of a single phase layered perovskite up to x ≤ 0.15 and a ZrO2 -based secondary phase was detected for higher Zr-doped compositions. The higher grain-growth rate induced by the larger ionic radius of Zr 4+ than Ti 4+ was supported by the field emission scanning electron microscopy (FESEM) results. The transition temperature increases slightly for the Zr-modified compositions, which can be described in terms of structural distortion due to the internal stresses developed within the ceramics. The Cole–Cole plot analysis of impedance spectra enabled to distinguish two relaxation behaviours that were assigned to originate from grains and grain boundaries. It was also observed that the remnant polarization and piezoelectric coefficient increases up to the solubility limit of Zr and then decreases with higher doping content. The temperature dependent piezoelectric coefficient was also studied, and was found to be stable up to the transition temperature in all compositions. All these results were explained on the basis of occupancy of the Zr 4+ ion at the B-site and for the higher composition ZrO2 secondary phase. Even the composition x = 0.15 exhibited low conductivity, a moderate dielectric constant and a highly stable d 33 value, demonstrating that the ceramic is an excellent material for high-temperature piezoelectric application. The possible reason for the enhancement of the electrical properties in the Zr-modified ceramic was discussed based on the structural analysis, which may be used for designing and/or modifying properties of SBT-related ceramics.