Lateral Magnetically Modulated Multilayers by Combining Ion Implantation and Lithography. Issue 11 (9th January 2017)

• Record Type: Journal Article
• Authors: Menéndez, Enric; Modarresi, Hiwa; Petermann, Claire; Nogués, Josep; Domingo, Neus; Liu, Haoliang; Kirby, Brian J.; Mohd, Amir Syed; Salhi, Zahir; Babcock, Earl; Mattauch, Stefan; Van Haesendonck, Chris; Vantomme, André; Temst, Kristiaan
• Is Part Of: Small. Volume 13:Issue 11(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-01-09
• Subjects: ion implantation -- lateral multilayers -- lithography -- magnetoresistance -- planar technology; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201603465
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract : The combination of lithography and ion implantation is demonstrated to be a suitable method to prepare lateral multilayers. A laterally, compositionally, and magnetically modulated microscale pattern consisting of alternating Co (1.6 µ m wide) and Co‐CoO (2.4 µ m wide) lines has been obtained by oxygen ion implantation into a lithographically masked Au‐sandwiched Co thin film. Magnetoresistance along the lines (i.e., current and applied magnetic field are parallel to the lines) reveals an effective positive giant magnetoresistance (GMR) behavior at room temperature. Conversely, anisotropic magnetoresistance and GMR contributions are distinguished at low temperature (i.e., 10 K) since the O‐implanted areas become exchange coupled. This planar GMR is principally ascribed to the spatial modulation of coercivity in a spring‐magnet‐type configuration, which results in 180° Néel extrinsic domain walls at the Co/Co‐CoO interfaces. The versatility, in terms of pattern size, morphology, and composition adjustment, of this method offers a unique route to fabricate planar systems for, among others, spintronic research and applications. Abstract : Ion implantation through lithographed masks is shown to be an advantageous method to prepare laterally modulated multilayers. Lateral patterns consisting of alternating Co (1.6 µm wide) and Co‐CoO (2.4 µm wide) lines are prepared by oxygen ion implantation into a prelithographed Au‐sandwiched Co thin film. The compositional and magnetic in‐plane modulation results in a highly tunable magnetoresistance, envisaging potential uses in spintronics.