High Speed Epitaxial Perovskite Memory on Flexible Substrates. Issue 11 (23rd January 2017)

• Record Type: Journal Article
• Authors: Bakaul, Saidur R.; Serrao, Claudy R.; Lee, Oukjae; Lu, Zhongyuan; Yadav, Ajay; Carraro, Carlo; Maboudian, Roya; Ramesh, Ramamoorthy; Salahuddin, Sayeef
• Is Part Of: Advanced materials. Volume 29:Issue 11(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-01-23
• Subjects: complex oxides -- ferroelectrics -- flexible electronics -- single crystals; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201605699
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Single‐crystal perovskite ferroelectric material is integrated at room temperature on a flexible substrate by the layer transfer technique. Two terminal memory devices fabricated with these materials exhibit faster switching speed, lower operating voltage, and superior endurance than other existing flexible counterparts. The research provides an avenue toward combining the rich functionality of charge and spin states, offered by the general class of complex oxides, onto a flexible platform.