Electrochemical-reaction-induced synaptic plasticity in MoOx-based solid state electrochemical cells. Issue 6 (17th November 2016)

• Record Type: Journal Article
• Authors: Yang, Chuan-Sen; Shang, Da-Shan; Chai, Yi-Sheng; Yan, Li-Qin; Shen, Bao-Gen; Sun, Young
• Is Part Of: Physical chemistry chemical physics. Volume 19:Issue 6(2017)
• Page Start: 4190
• Page End: 4198
• Publication Date: 2016-11-17
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.3
• DOI: 10.1039/c6cp06004h
• Languages: English
• ISSNs: 1463-9076

Abstract

Abstract : Solid state electrochemical cells with synaptic functions have important applications in building smart-terminal networks. Abstract : Solid state electrochemical cells with synaptic functions have important applications in building smart-terminal networks. Here, the essential synaptic functions including potentiation and depression of synaptic weight, transition from short- to long-term plasticity, spike-rate-dependent plasticity, and spike-timing-dependent plasticity behavior were successfully realized in an Ag/MoO x /fluorine-doped tin oxide (FTO) cell with continual resistance switching. The synaptic plasticity underlying these functions was controlled by tuning the excitatory post-synaptic current (EPSC) decay, which is determined by the applied voltage pulse number, width, frequency, and intervals between the pre- and post-spikes. The physical mechanism of the artificial synapse operation is attributed to the interfacial electrochemical reaction processes of the MoO x films with the adsorbed water, where protons generated by water decomposition under an electric field diffused into the MoO x films and intercalated into the lattice, leading to the short- and long-term retention of cell resistance, respectively. These results indicate the possibility of achieving advanced artificial synapses with solid state electrochemical cells and will contribute to the development of smart-terminal networking systems.