A new technique to grow incongruent melting Ga:YIG crystals: the edge‐defined film‐fed growth method. (15th May 2013)

• Record Type: Journal Article
• Authors: Zhuang, Naifeng; Chen, Wenbing; Shi, Lijun; Nie, Jianbiao; Hu, Xiaolin; Zhao, Bin; Lin, Shukun; Chen, Jianzhong
• Is Part Of: Journal of applied crystallography. Volume 46:Part 3(2013:Jun.)
• Page Start: 746
• Page End: 751
• Publication Date: 2013-05-15
• Subjects: edge‐defined film‐fed growth method -- Ga -- yttrium iron garnet (YIG) -- crystal growth -- Curie temperature -- transmission spectra; Crystallography -- Periodicals; 548.05
• DOI: 10.1107/S002188981301025X
• Languages: English
• ISSNs: 0021-8898

Abstract

Abstract : Crystalline yttrium iron garnet (YIG) is an important magneto‐optical material. However, this crystal is an incongruent melting compound. As is well known, compared to the crystal growth of a congruent melting compound by using the Czochralski method, the crystal growth of an incongruent melting compound is more difficult. In this work, a system for growing Ga:YIG single crystals by the edge‐defined film‐fed growth (EFG) method was designed and constructed, and the mechanism of crystal growth was also preliminarily studied. The Ga 3+ dopant concentration, the Curie temperature and the transmission spectra of as‐grown crystals were investigated to evaluate their potential application in magneto‐optical devices. The success of growing Ga:YIG crystals by the EFG method provides a new way to grow other incongruent melting compounds.