Influence of the buffer layer properties on the intensity of Raman scattering of graphene. (29th April 2013)

• Record Type: Journal Article
• Authors: Dyakov, S. A.; Perova, T. S.; Miao, C. Q.; Xie, Y.‐H.; Cherevkov, S. A.; Baranov, A. V.
• Is Part Of: Journal of Raman spectroscopy. Volume 44:Number 6(2013:Jun.)
• Page Start: 803
• Page End: 809
• Publication Date: 2013-04-29
• Subjects: graphene -- Raman spectra -- enhancement of Raman intensity -- transfer matrix method -- oscillating dipoles; Raman spectroscopy -- Periodicals; 535.846
• DOI: 10.1002/jrs.4294
• Languages: English
• ISSNs: 0377-0486

Abstract

Abstract : Using a model of oscillating dipoles, we simulate the intensity of the G‐band in the Raman signal from structures consisting of graphene, separated by an arbitrary buffer layer from a substrate. It is found that a structure with an optimized buffer layer refractive index and thickness exhibits a Raman signal which is nearly 50 times more intense than that from the same structure with a non‐optimized buffer layer. The theoretical simulations are verified by Raman measurements on structures consisting of a layer of graphene on SiO2 and Al2 O3 buffer layers. The optical contrast of the single graphene layer is calculated for an arbitrary buffer layer. It was found that both the Raman intensity and optical contrast can be maximized by varying the buffer layer thickness. Copyright © 2013 John Wiley & Sons, Ltd. Abstract : In this paper, a simultaneous presentation of Raman intensity of the G‐band and optical contrast maps for a single layer of graphene, as a function of refractive index and buffer layer thickness is produced. This presentation enables selection of the buffer layer material in order to optimize Raman and optical microscopy imaging. The advantages of this technique, demonstrated at an excitation wavelength of 457 nm, are confirmed experimentally for two dielectric materials viz. SiO2 and Al2 O3 with different refractive indices and thicknesses.