Layer-controlled CVD growth of large-area two-dimensional MoS2 films. Issue 5 (11th November 2014)

• Record Type: Journal Article
• Authors: Jeon, Jaeho; Jang, Sung Kyu; Jeon, Su Min; Yoo, Gwangwe; Jang, Yun Hee; Park, Jin-Hong; Lee, Sungjoo
• Is Part Of: Nanoscale. Volume 7:Issue 5(2015)
• Page Start: 1688
• Page End: 1695
• Publication Date: 2014-11-11
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c4nr04532g
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : We demonstrate that layer-controlled and large-area CVD MoS2 films can be achieved by treating the surfaces of their bottom SiO2 substrates with the oxygen plasma process. Abstract : In spite of the recent heightened interest in molybdenum disulfide (MoS2 ) as a two-dimensional material with substantial bandgaps and reasonably high carrier mobility, a method for the layer-controlled and large-scale synthesis of high quality MoS2 films has not previously been established. Here, we demonstrate that layer-controlled and large-area CVD MoS2 films can be achieved by treating the surfaces of their bottom SiO2 substrates with the oxygen plasma process. Raman mapping, UV-Vis, and PL mapping are performed to show that mono, bi, and trilayer MoS2 films grown on the plasma treated substrates fully cover the centimeter scale substrates with a uniform thickness. Our TEM images also present the single crystalline nature of the monolayer MoS2 film and the formation of the layer-controlled bi- and tri-layer MoS2 films. Back-gated transistors fabricated on these MoS2 films are found to exhibit the high current on/off ratio of ∼10 6 and high mobility values of 3.6 cm 2 V −1 s −1 (monolayer), 8.2 cm 2 V −1 s −1 (bilayer), and 15.6 cm 2 V −1 s −1 (trilayer). Our results are expected to have a significant impact on further studies of the MoS2 growth mechanism as well as on the scaled layer-controlled production of high quality MoS2 films for a wide range of applications.