Laser irradiation influence on Si/3C-SiC/Si heterostructures for subsequent 3C-SiC membrane elaboration. Issue 54 (10th May 2016)

• Record Type: Journal Article
• Authors: Michaud, J.F.; Khazaka, R.; Portail, M.; Andrä, G.; Bergmann, J.; Alquier, D.
• Is Part Of: MRS advances. Volume 1:Issue 54(2016)
• Page Start: 3649
• Page End: 3654
• Publication Date: 2016-05-10
• Subjects: chemical vapor deposition (CVD) (deposition), -- laser, -- microstructure; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/adv.2016.327
• Languages: English
• ISSNs: 2059-8521

Abstract

ABSTRACT: The cubic polytype of silicon carbide is a stimulating candidate for Micro-Electro-Mechanical-Systems (MEMS) applications due to its interesting physical and chemical properties. Recently, we demonstrated the possibility to elaborate 3C-SiC membranes on 3C-SiC pseudo-substrates, using a silicon epilayer grown by Low Pressure Chemical Vapor Deposition as a sacrificial layer. Such structures could be the starting point for the elaboration of new MEMS devices. However, the roughness still represents a major concern. Therefore, in this contribution, we investigate the influence of an excimer laser irradiation on the Si epilayer surface prior to the 3C-SiC epilayer growth. We compare these results with the 3C-SiC epilayer grown directly on the as-grown Si epilayer.