Numerical study on off-current features in an organic transistor by controlling electrode-overlap area. (12th August 2016)

• Record Type: Journal Article
• Authors: Song, Dong-Seok; Kim, Hyeok; Vincent, Premkumar; Hahn, Joonku; Park, Jaehoon; Bae, Jin-Hyuk
• Is Part Of: Molecular crystals and liquid crystals. Volume 635(2016)
• Page Start: 67
• Page End: 73
• Publication Date: 2016-08-12
• Subjects: Numerical Study -- Off-state features -- Thin-film transistor -- Electrode overlap; Molecular crystals -- Periodicals; Liquid crystals -- Periodicals; Liquid crystals; Molecular crystals; Periodicals; 548
• DOI: 10.1080/15421406.2016.1200357
• Languages: English
• ISSNs: 1542-1406

Abstract

ABSTRACT: We investigate the effect of the source/drain-to-gate electrode overlap area on the off-current features in organic thin-film transistors (OTFTs). For the numerical simulation, we used 2-D Atlas, a device simulator based on a two-dimensional Technology Computer Aided Design (TCAD) software tool provided by Silvaco. Both channel and overlap lengths are varied from 1 μm to 1000 μm. The off-current decreases with increasing channel length, whereas variations in the overlap area show a negligible effect on both on- and off-state currents.