Cite
HARVARD Citation
Pan, C. et al. (2017). Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride. Advanced functional materials. p. n/a. [Online].
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Pan, C. et al. (2017). Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride. Advanced functional materials. p. n/a. [Online].