Optimized Ultrasharp Silicon Nanowire Geometries for Enhanced Field Ionization Properties. Issue 1785 (2015)

• Record Type: Journal Article
• Authors: Polat, Kazim Gurkan; Zhou, Chen; Umar, Ahmad; Islam, M. Saif
• Editors: Arbiol, J.; Fontcuberta i Morral, A.; Filler, M.A.; Dick, K.A.; Xiong, Q.H.
• Is Part Of: MRS proceedings. Issue 1785(2015)
• Page Start: 7
• Page End: 11
• Publication Date: 2015
• Subjects: Si, -- nanoscale, -- simulation; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.514
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: Silicon (Si) nanowires offer great potential for field ionization (FI) applications due to well-established Si microfabrication methods combined with favorable ionizing properties of Si. Band bending of semiconductors under applied electric fields increases the FI probability, which is not possible with metal-based counterparts. While it has been demonstrated that scaling down the active material geometry can increase the FI efficiency, maximum electric field at the tip of a single nanowire decreases by quenching effect of nearby nanowires. In this work, optimization of Si nanowire geometries for improved FI efficiencies is explored.