Mapping of Au/a‐IGZO Schottky contacts by using scanning internal photoemission microscopy. Issue 2 (5th December 2016)

• Record Type: Journal Article
• Authors: Shiojima, Kenji; Shingo, Masato
• Is Part Of: Physica status solidi. Volume 254:Issue 2(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-12-05
• Subjects: amorphous materials -- degradation -- InGaZnO -- scanning internal photoemission microscopy -- Schottky contacts; Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201600587
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : We have demonstrated scanning internal photoemission microscopy to characterize the degradation of Au/amorphous In–Ga–Zn–O Schottky contacts. After applying a reverse voltage stress of −30 V, the current–voltage characteristics became leaky and a local degradation of the contacts was clearly visualized in a photocurrent image, while no symptom of the degradation was observed in the optical microscope image. In addition, it was found that Schottky barrier height decreased by 0.1 eV in the degraded region. Thus, we conclude that this method gives quantitative and visual information on the underlying thin‐film transparency metal/semiconductor interfaces.