Numerical study of InGaN tandem solar cells with intermediate bands. Issue 2 (23rd December 2016)

• Record Type: Journal Article
• Authors: Chen, Kuo‐Feng; Hung, Chien‐Lun
• Is Part Of: Physica status solidi. Volume 11:Issue 2(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-12-23
• Subjects: InGaN -- solar cells -- intermediate bands -- tandem solar cells -- device simulation; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201600429
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : Theoretical investigations of InGaN tandem solar cells with intermediate bands (IBs) have been conducted through calculating the diode equation taking into account the radiative and nonradiative recombination currents. The calculated maximum efficiencies of the double‐junction cell with one IB in each subcell are 57.85% and 68.37% under AM1.5G one‐sun and 46000‐sun illuminations, respectively. It has also been observed that the combined device with the top‐cell bandgaps of 2.9–3.4 eV (2.6–3.4 eV for full concentration) may have an opportunity to realize the application of over 50% efficiency. We suggest that the optimized width of the IB layer be designed in the range of 1–6 μm if its absorption coefficient is 10 4 –10 5 cm –1 in the IB region. Abstract : InGaN intermediate‐band (IB) tandem solar cell, which is constructed by a series‐connected double junction with one IB in each subcell, is theoretically evaluated. The 57.85% and 68.37% maximum efficiencies under no and full concentrations, respectively, have been observed. The authors' theoretical design offers the potential for realizing ultrahigh efficiency with a relatively uncomplicated and feasible scheme as opposed to the multi‐junction and multi‐IB devices.