Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy. Issue 8 (19th December 2016)

• Record Type: Journal Article
• Authors: Cai, Hui; Chen, Bin; Wang, Gang; Soignard, Emmanuel; Khosravi, Afsaneh; Manca, Marco; Marie, Xavier; Chang, Shery L. Y.; Urbaszek, Bernhard; Tongay, Sefaattin
• Is Part Of: Advanced materials. Volume 29:Issue 8(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-12-19
• Subjects: gallium telluride -- physical vapor transport -- pseudo‐1D materials; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201605551
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : A new member of the layered pseudo‐1D material family—monoclinic gallium telluride (GaTe)— is synthesized by physical vapor transport on a variety of substrates. The [010] atomic chains and the resulting anisotropic behavior are clearly revealed. The GaTe flakes display multiple sharp photoluminescence emissions in the forbidden gap, which are related to defects localized around selected edges and grain boundaries.