Co/Pt Multilayers: Initialization‐Free Multilevel States Driven by Spin–Orbit Torque Switching (Adv. Mater. 8/2017). Issue 8 (February 2017)

• Record Type: Journal Article
• Authors: Huang, Kuo‐Feng; Wang, Ding‐Shuo; Tsai, Ming‐Han; Lin, Hsiu‐Hau; Lai, Chih‐Huang
• Is Part Of: Advanced materials. Volume 29:Issue 8(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-02
• Subjects: Co/Pt multilayers -- initialization‐free -- multilevel -- spin–orbit torque; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201770054
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Utilizing multi‐domain formation in Co/Pt multilayers, how to achieve multilevel storage in spin‐orbit‐torque MRAM is demonstrated in article number 1601575 by Chih‐Huang Lai and co‐workers. It is rather remarkable that, by modulating the writing pulse conditions, precise control of the final magnetization states can be achieved, independent of the initial configurations. The initialization‐free multilevel memory advances the spin‐orbit‐torque MRAM to higher storage density for practical applications.