A 1–11 GHz ultra‐wideband LNA using M‐derived inductive peaking circuit in UMC 65 nm CMOS. Issue 3 (26th January 2017)

• Record Type: Journal Article
• Authors: Bhatt, Darshak; Mukherjee, Jayanta; Redouté, Jean‐Michel
• Is Part Of: Microwave and optical technology letters. Volume 59:Issue 3(2017:Mar.)
• Page Start: 521
• Page End: 526
• Publication Date: 2017-01-26
• Subjects: m‐derived circuit -- inductive peaking -- ultra‐wideband -- low‐noise amplifier; Microwaves -- Periodicals; Optics -- Periodicals; 621
• DOI: 10.1002/mop.30336
• Languages: English
• ISSNs: 0895-2477

Abstract

ABSTRACT: A high‐gain, low‐power, and low‐noise amplifier (LNA) is designed in UMC 65 nm radio frequency (RF)‐CMOS technology for operation over the 1 to 11 GHz RF band. This LNA design is based on an m‐derived inductive peaking circuit with a shunt feedback inverter. The m‐derived inductive peaking circuit is placed between two shunt feedback inverters. Further, a split inductor topology is introduced in the circuit. The procedure for the integrating of an m‐derived inductive peaking circuit in LNA is explained in detail. The proposed circuit achieves more than 14 dB of power gain over an ultra‐wideband of 1 to 11 GHz. The measurement of the proposed LNA achieves a minimum of 2.5 dB of noise figure, and more than −8 dBm of third‐order input intercept point, while consuming 11.3 mW of power. © 2017 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:521–526, 2017