Novel method to determine base resistance in sige HBT from small‐signal S‐parameters measurement. Issue 3 (March 2017)

• Record Type: Journal Article
• Authors: Sun, Yabin; Fu, Jun; Wang, Yudong; Zhou, Wei; Li, Xiaojin; Shi, Yanling
• Is Part Of: Microwave and optical technology letters. Volume 59:Issue 3(2017:Mar.)
• Page Start: 555
• Page End: 560
• Publication Date: 2017-03
• Subjects: SiGe HBT -- base resistance -- compact model -- small‐signal S‐parameters; Microwaves -- Periodicals; Optics -- Periodicals; 621
• DOI: 10.1002/mop.30341
• Languages: English
• ISSNs: 0895-2477

Abstract

ABSTRACT: A novel and robust method to determine the internal variable base resistance ( R B ) of SiGe HBT from small‐signal S ‐parameters measurement is developed in present work. The proposed method is adopted in two kinds of SiGe HBT compact models, MEXTRAM and HICUM. With the aid of auxiliary collector resistance, the lower and upper limits of R B are built up and a narrow variation range of R B is obtained. Thus, R B can be directly estimated from the small‐signal S ‐parameters measurement. The proposed method is successfully applied to several sizes of SiGe HBTs and the experiment results shows that average error between the lower and upper limits of R B is less than 3% over a wide range of bias points, which can satisfy the demands of most engineering applications. Therefore, we believe that the proposed technique is a reliable routine applicable to estimate the base resistance in SiGe HBTs. © 2017 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:555–560, 2017