All‐solution‐printed oxide thin‐film transistors by direct thermal nanoimprinting for use in active‐matrix arrays. Issue 1 (19th October 2016)

• Record Type: Journal Article
• Authors: Hirose, Daisuke; Koyama, Hiroaki; Fukada, Kazuhiro; Murakami, Yoshitaka; Satou, Keisuke; Inoue, Satoshi; Shimoda, Tatsuya
• Is Part Of: Physica status solidi. Volume 214:Issue 1(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-10-19
• Subjects: oxide thin film transistors -- printed electronics -- solution derived oxides -- TFT arrays -- thermal nanoimprinting; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201600397
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : All‐solution‐printed oxide thin‐film transistors (TFTs) were fabricated using a direct thermal nanoimprinting technique termed nanorheology printing (n‐RP). n‐RP is a printing technology that utilizes the thermoplastic properties of oxide gels. We prepared such thermoplastic oxide gels and developed a suitable alignment system. Using this system, TFTs designed for use in active‐matrix arrays were fabricated with a high alignment accuracy of less than 5 µm. We succeeded in incorporating these TFTs into all‐solution‐printed oxide TFT arrays, and the operation of the transistors in the arrays was confirmed.