A rational strategy for improving air-stability of OFETs via electronic tuning of substituents of benzene-fused bis(tetrathiafulvalene). Issue 34 (26th August 2015)

• Record Type: Journal Article
• Authors: Lei, Wenwei; Liu, Yucun; Bai, Jinfeng; Dai, Yanfeng; Kan, Yuhe; Chen, Tie; Yin, Bingzhu
• Is Part Of: Tetrahedron. Volume 71:Issue 34(2015)
• Page Start: 5465
• Page End: 5471
• Publication Date: 2015-08-26
• Subjects: bis(Tetrathiafulvalene) -- p-Type organic semiconductor -- OFET -- Hole mobility -- Thin film transistor; Chemistry, Organic -- Periodicals; 547.005
• DOI: 10.1016/j.tet.2015.06.082
• Languages: English
• ISSNs: 0040-4020

Abstract

Abstract: To improve the air-stability of OFETs, several strong electron-withdrawing groups were introduced to both terminals of the benzene-fused bis (tetrathiafulvalene). This strategy indeed brought many useful changes, such as HOMO energies level, packing structure. Their oxidation potentials determined by cyclic voltammetry were shifted cathodically by more than 0.20 eV compared with the alkylthio group substituted analogues. Their solution-processed field-effect transistors showed improved p -type organic semiconductor characteristics. In the experimental study, the best performing device exhibited a hole mobility up to 0.057 cm 2 V −1 s −1 under ambient conditions. Graphical abstract: