Improving the Thermal Stability of Cu3N Films by Addition of Mn. Issue 8 (August 2015)

• Record Type: Journal Article
• Authors: Fan, Xiaoyan; Li, Zhenjiang; Meng, Alan; Li, Chun; Wu, Zhiguo; Yan, Pengxun
• Is Part Of: Journal of materials science & technology. Volume 31:Issue 8(2015:Aug.)
• Page Start: 822
• Page End: 827
• Publication Date: 2015-08
• Subjects: Magnetron sputtering -- Cu3N film -- Mn-doped -- Thermal stability; Metals -- Periodicals; Materials science -- Periodicals; Materials science; Metals; Periodicals; 620.1105
• DOI: 10.1016/j.jmst.2015.07.013
• Languages: English
• ISSNs: 1005-0302

Abstract

Abstract : Mn-doped Cu3 N films were deposited by cylindrical magnetron sputtering equipment on the common glass at room temperature. The incorporation of Mn can change the preferred growth orientation from Cu-rich plane (111) to N-rich plane (100) due to the improvement of nitridation of Cu. The shrinkage of the lattice and the X-ray photoelectron spectroscopy results reveal that Mn should replace Cu atoms in the lattice or be segregated in the grain boundaries. The thickness of Mn-doped film is smaller than that of the pure one due to the less physisorption of N species among the columnar grains. The mean grain size and the energy gap become larger with increasing Mn concentration to 2.2 at.% and then decrease when the concentration of Mn is higher than 2.2 at.%. Notably, weak doping of 1.5 at.% Mn successfully promotes the decomposed temperature by ∼50 °C. According to the results of XRD and SEM for Mn-doped films annealed in vacuum, a possible decomposed mechanism with increasing the annealing temperature is proposed.