Transition Metal Dichalcogenide‐Based Transistor Circuits for Gray Scale Organic Light‐Emitting Displays. (23rd November 2016)

• Record Type: Journal Article
• Authors: Yu, Sanghyuck; Kim, Jin Sung; Jeon, Pyo Jin; Ahn, Jongtae; Park, Jae Chul; Im, Seongil
• Is Part Of: Advanced functional materials. Volume 27:Number 2(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-11-23
• Subjects: field effect transistors -- MoS2 -- OLED pixels -- switching -- WSe2; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201603682
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : Two types of transition metal dichalcogenide (TMD) transistors are applied to demonstrate their possibility as switching/driving elements for the pixel of organic light‐emitting diode (OLED) display. Such TMD materials are 6 nm thin WSe2 and MoS2 as a p‐type and n‐type channel, respectively, and the pixel is thus composed of external green OLED and nanoscale thin channel field effect transistors (FETs) for switching and driving. The maximum mobility of WSe2 ‐FETs either as switch or as driver is ≈30 cm 2 V −1 s −1, in linear regime of the gate voltage sweep range. Digital (ON/OFF‐switching) and gray‐scale analogue operations of OLED pixel are nicely demonstrated. MoS2 nanosheet FET‐based pixel is also demonstrated, although limited to alternating gray scale operation of OLED. Device stability issue is still remaining for future study but TMD channel FETs are very promising and novel for their applications to OLED pixel because of their high mobility and I D ON/OFF ratio. Abstract : 2D transition metal dichalcogenides (TMD), WSe2, and MoS2 are used to demonstrate their performances in pixels of organic light‐emitting diode (OLED) displays. The pixel is composed of an external green OLED and TMD‐channel driving/switching transistors. Digital (ON/OFF‐switching) and gray‐scale analogue operations of OLED pixels are nicely demonstrated.