Cite
HARVARD Citation
Simoen, E. et al. (2016). Comparison between Si/SiO2 mid‐gap interface states and deep levels associated with silicon‐oxygen superlattices in p‐type silicon. Physica status solidi. 13 (10), pp. 718-723. [Online].
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Simoen, E. et al. (2016). Comparison between Si/SiO2 mid‐gap interface states and deep levels associated with silicon‐oxygen superlattices in p‐type silicon. Physica status solidi. 13 (10), pp. 718-723. [Online].