Effects of substrate temperature on change in percolation properties of ultra thin dielectric films. Issue 10 (3rd June 2016)

• Record Type: Journal Article
• Authors: Milanović, Zeljka; Zulim, Ivan; Pivac, Branko
• Is Part Of: Physica status solidi. Volume 13:Issue 10-12(2016)
• Page Start: 756
• Page End: 759
• Publication Date: 2016-06-03
• Subjects: percolation -- cubic lattice -- temperature -- thin films -- roughness; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201610041
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: In this paper, we explored the impact of surface roughness on ultra‐thin dielectrics characteristics. Simple cubic lattice is used as a base for depositing spheres of radius R, designed as a thin film, as the base for simulation of defects generation and deposition. Continuum percolation model, used to generate a rough surface in order to analyse how roughness and temperature influence the conductivity, consists of randomly placed spheres of either one or some distribution of radii, which then form a thin, rough layer in question. It is shown that when the temperature of the substrate is increased material defects tend to form within the film contributing to a faster cluster growth and greater film conductivity. The influence of temperature on average cluster size for homogeneous distribution of defects is assumed according to the applied temperature (depending on the free carrier's diffusion length) is researched. It is evident from the performed simulations that temperature has an important influence on thin film conductivity in several different ways; it can contribute to the increase of the number of spanning clusters or the average size of clusters. This way, defects can either provide starting points for new spanning clusters or can encourage clusters merging. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)