Cite
HARVARD Citation
Zhou, K. et al. (2017). Unintentional gallium incorporation in InGaN layers during epitaxial growth. Superlattices and microstructures. pp. 323-328. [Online].
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Zhou, K. et al. (2017). Unintentional gallium incorporation in InGaN layers during epitaxial growth. Superlattices and microstructures. pp. 323-328. [Online].