Precisely Aligned Monolayer MoS2 Epitaxially Grown on h‐BN basal Plane. Issue 7 (7th December 2016)

• Record Type: Journal Article
• Authors: Yu, Hua; Yang, Zhengzhong; Du, Luojun; Zhang, Jing; Shi, Jinan; Chen, Wei; Chen, Peng; Liao, Mengzhou; Zhao, Jing; Meng, Jianling; Wang, Guole; Zhu, Jianqi; Yang, Rong; Shi, Dongxia; Gu, Lin; Zhang, Guangyu
• Is Part Of: Small. Volume 13:Issue 7(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-12-07
• Subjects: CVD -- domain boundary -- epitaxial growth -- monolayer MoS2 -- rotational alignment; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201603005
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract : Control of the precise lattice alignment of monolayer molybdenum disulfide (MoS2 ) on hexagonal boron nitride (h‐BN) is important for both fundamental and applied studies of this heterostructure but remains elusive. The growth of precisely aligned MoS2 domains on the basal plane of h‐BN by a low‐pressure chemical vapor deposition technique is reported. Only relative rotation angles of 0° or 60° between MoS2 and h‐BN basal plane are present. Domains with same orientation stitch and form single‐crystal, domains with different orientations stitch and from mirror grain boundaries. In this way, the grain boundary is minimized and a continuous film stitched by these two types of domains with only mirror grain boundaries is obtained. This growth strategy is also applicable to other 2D materials growth. Abstract : Monolayer MoS2 epitaxially grown on a h‐BN basal plane with a precise orientation alignment is achieved. Domains with the same orientation stitch and form single‐crystals, while domains with different orientations stitch and form mirror grain boundaries. This growth strategy is also applicable for other 2D material growth.