Design of Ku‐band GaN HEMT power amplifier based on multi‐bias statistical model. (1st December 2015)

• Record Type: Journal Article
• Authors: Chen, Zhikai; Xu, Yuehang; Wang, Changsi; Wen, Zhang; Xu, Ruimin
• Other Names: Raffo Antonio guestEditor.
• Is Part Of: International journal of numerical modelling. Volume 30:Number 1(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2015-12-01
• Subjects: equivalent circuit parameters -- GaN HEMT -- Monte Carlo simulation -- power amplifier -- statistical model; Electric networks -- Mathematical models -- Periodicals; Electronics -- Mathematical models -- Periodicals; 621.3011
• DOI: 10.1002/jnm.2130
• Languages: English
• ISSNs: 0894-3370

Abstract

Abstract: A design method for microwave GaN high‐electron mobility transistor (HEMT) power amplifier based on equivalent circuit parameters multi‐bias statistical models is presented. The statistical modeling method includes principal component analysis, factor analysis, and multiple regressions modeling techniques. The statistical model is validated by comparing original and Monte Carlo‐simulated means, standard deviations, correlation matrix, and S‐parameters. A Ku‐band GaN HEMT power amplifier is designed with high drain efficiency by using the established statistical model for demonstration purpose. The simulated results are statistically indistinguishable from the measured results. This method is suitable for GaN HEMT power amplifier design and yield analysis. Copyright © 2015 John Wiley & Sons, Ltd.