A procedure for the extraction of a nonlinear microwave GaN FET model. (21st March 2016)

• Record Type: Journal Article
• Authors: Avolio, Gustavo; Vadalà, Valeria; Angelov, Iltcho; Raffo, Antonio; Marchetti, Mauro; Vannini, Giorgio; Schreurs, Dominique
• Other Names: Raffo Antonio guestEditor.
• Is Part Of: International journal of numerical modelling. Volume 30:Number 1(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-03-21
• Subjects: FET nonlinear model -- large‐signal network analyzer -- nonlinear model extraction -- vector‐calibrated measurements; Electric networks -- Mathematical models -- Periodicals; Electronics -- Mathematical models -- Periodicals; 621.3011
• DOI: 10.1002/jnm.2151
• Languages: English
• ISSNs: 0894-3370

Abstract

Summary: In this paper, we describe an extraction procedure of nonlinear models for microwave field‐effect transistor (FET). We use a nonlinear model available in commercial CAD tools, and we extract the parameters by combining direct extraction and numerical optimization. We determine a first estimate of the model parameters by few DC and S‐parameter measurements. Next, we refine the parameters by optimization against low‐frequency and high‐frequency vector‐calibrated large‐signal measurements gathered with a Large‐Signal‐Network Analyzer (LSNA). As case study we consider a 0.25 × 200 µm 2 GaN FET on SiC for power amplifier applications. Ultimately, we want to show that a good accuracy level can be achieved while minimizing the extraction effort and that an accurate model can be built and suitably tailored depending on the final application. Copyright © 2016 John Wiley & Sons, Ltd.