A novel approach for the modeling of HEMT high power device. (6th June 2016)

• Record Type: Journal Article
• Authors: Sang, Lei; Li, Xiangxiang; Huang, Wen; Rui, Jincheng; Pang, Dongwei
• Other Names: Raffo Antonio guestEditor.
• Is Part Of: International journal of numerical modelling. Volume 30:Number 1(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-06-06
• Subjects: subsection model -- power amplifier -- SVR; Electric networks -- Mathematical models -- Periodicals; Electronics -- Mathematical models -- Periodicals; 621.3011
• DOI: 10.1002/jnm.2172
• Languages: English
• ISSNs: 0894-3370

Abstract

Summary: Current characteristic has not been detailed, analyzed, and modeled in conventional High‐electron‐mobility transistor field‐effect transistor model, which is not accuracy enough because the current has different variation rules under different gate voltages. A novel approach for the modeling of high‐electron‐mobility transistor high power amplifier is proposed in this paper. In order to obtain a more accuracy nonlinear model, drain current database are divided into three different regions, including the high gate bias region, the middle gate bias region, and the approximate pinch‐off regions. The three nonlinear current regions are modeled separately and implemented in final high‐electron‐mobility transistor field‐effect transistor model based on support vector regression algorithm. The proposed model is validated with high accuracy by comparing the simulated data with the tested data of a high power gallium nitride high‐electron‐mobility transistor amplifier, which the modeling is based on fewer samples compared with conventional methods based on the integrated current model. Copyright © 2016 John Wiley & Sons, Ltd.