Low‐Voltage Polyelectrolyte‐Gated Polymer Field‐Effect Transistors Gravure Printed at High Speed on Flexible Plastic Substrates. (27th December 2016)

• Record Type: Journal Article
• Authors: Thiburce, Quentin; Campbell, Alasdair J.
• Is Part Of: Advanced Electronic Materials. Volume 3:Number 2(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-12-27
• Subjects: electrolyte‐gated organic field‐effect transistors (EGOFETs) -- gravure printing -- organic electronics -- polyelectrolytes -- thin‐film transistors; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201600421
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : This study reports the fabrication of polymer field‐effect transistors operating under a bias of |1 V| in which the insulator and semiconductor are gravure‐printed on plastic at the high speed of 0.7 m s −1 . Remarkably, the process does not necessitate any surface modification and relies solely on the careful selection and optimization of formulations based on solvent blends. In addition to demonstrating high‐throughput fabrication, this study fulfills another requirement for organic electronics and achieves low‐voltage operation in ambient air by using a polyelectrolyte insulator, poly(4‐styrenesulfonic acid) (PSSH). PSSH is a proton conductor that forms electrical double layers at the interfaces with the gate electrode and the semiconductor channel upon application of a small gate voltage (≤ |1 V|). Printed PSSH exhibits a high capacitance of 10 µF cm −2, leading to a printed poly(3‐hexylthiophene) hole mobility above 0.1 cm 2 V −1 s −1 in a bottom‐gate, top‐contact configuration. Abstract : The fabrication of electrolyte‐gated organic field‐effect transistors in which the gate insulator and polymer semiconductor are gravure printed on a flexible plastic substrate at high speed (0.7 m s −1 ) is reported. The polyelectrolyte gate insulator yields a very high electrical double‐layer capacitance, allowing very low‐voltage transistor operation, high on currents and high semiconductor hole mobility.