Achieving Uniform Monolayer Transition Metal Dichalcogenides Film on Silicon Wafer via Silanization Treatment: A Typical Study on WS2. Issue 7 (14th December 2016)

• Record Type: Journal Article
• Authors: Chen, Ying; Gan, Lin; Li, Huiqiao; Ma, Ying; Zhai, Tianyou
• Is Part Of: Advanced materials. Volume 29:Issue 7(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-12-14
• Subjects: chemical vapor deposition -- silanization -- uniform films; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201603550
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : A silanization reaction is employed to improve the dispersion of precursors on a silicon wafer for a large‐size uniform transition metal dichalcogenide (TMD) film synthesis and to achieve a highly crystalline monolayer WS2 film up to 1 cm 2 . The novel strategy is also verified for the synthesis of WSe2 and MoS2 uniform films, suggesting universality for TMD film fabrication.