A novel 3C-SiC on Si power Schottky diode design and modelling. Issue 1693 (10th June 2014)

• Record Type: Journal Article
• Authors: Li, Fan; Sharma, Yogesh K.; Fisher, Craig A.; Jennings, Michael R.; Mawby, Philip A.
• Is Part Of: MRS proceedings. Issue 1693:(2014)
• Publication Date: 2014-06-10
• Subjects: devices, -- simulation, -- compound; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2014.571
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: Although 3C-SiC has a narrower bandgap than 4H-SiC, it is the only SiC polytype that can be grown directly over large area silicon substrates. It has the potential to provide a more economical choice than 4H-SiC for intermediate power devices, such as inverters for electric vehicles. To fabricate a vertical device on 3C-SiC, the Si substrate is usually removed either by etching or polishing. Neither of these processes is economical nor efficient. In this paper we propose a lateral Schottky diode design for 3C-SiC on Si structure. 2D finite element simulations using ATLAS showed that a breakdown voltage beyond 1200 V can be achieved with a 4 μm thick epilayer. Physical models used for 3C-SiC/Si power devices simulations are introduced. Advantages of lateral 3C-SiC/Si diodes over free standing 3C-SiC are also discussed.