High-temperature stable field emission of B-doped SiC nanoneedle arrays. Issue 17 (15th April 2015)

• Record Type: Journal Article
• Authors: Wang, Lin; Wei, Guodong; Gao, Fengmei; Li, Chengming; Yang, Weiyou
• Is Part Of: Nanoscale. Volume 7:Issue 17(2015)
• Page Start: 7585
• Page End: 7592
• Publication Date: 2015-04-15
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c5nr00952a
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : We report the field emission of B-doped SiC nanoarrays, suggesting they could be robust electron sources for service under high temperatures. Abstract : Current emission stability is one of the key issues for field emitters for them to be practically applied as electron sources. In the present work, large-scale and well-aligned B-doped SiC nanoneedle arrays have been grown on 6 H -SiC wafer substrates via pyrolysis of polymeric precursors. The measured field emission (FE) characteristics suggest that the turn-on fields of the as-synthesized SiC nanoneedle arrays are reduced from 1.92 to 0.98 V μm −1 with temperature increasing from room temperature (RT) to 500 °C, suggesting their excellent FE performances. The slightly changed current fluctuations (only ∼1.3%) between RT and 200 °C confirm that the present SiC nanoarrays with B dopants could be highly stable field emitters to be used in service under harsh conditions of high temperatures.