50‐Fold EQE Improvement up to 6.27% of Solution‐Processed All‐Inorganic Perovskite CsPbBr3 QLEDs via Surface Ligand Density Control. Issue 5 (24th November 2016)

• Record Type: Journal Article
• Authors: Li, Jianhai; Xu, Leimeng; Wang, Tao; Song, Jizhong; Chen, Jiawei; Xue, Jie; Dong, Yuhui; Cai, Bo; Shan, Qingsong; Han, Boning; Zeng, Haibo
• Is Part Of: Advanced materials. Volume 29:Issue 5(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-11-24
• Subjects: all‐inorganic perovskites -- cesium lead halides (CsPbX3) -- colloidal nanocrystals -- quantum‐dot light‐emitting diodes (QLEDs) -- surface ligand density control; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201603885
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Solution‐processed CsPbBr3 quantum‐dot light‐emitting diodes with a 50‐fold external quantum efficiency improvement (up to 6.27%) are achieved through balancing surface passivation and carrier injection via ligand density control (treating with hexane/ethyl acetate mixed solvent), which induces the coexistence of high levels of ink stability, photoluminescence quantum yields, thin‐film uniformity, and carrier‐injection efficiency.