High‐Electron‐Mobility and Air‐Stable 2D Layered PtSe2 FETs. Issue 5 (25th November 2016)

• Record Type: Journal Article
• Authors: Zhao, Yuda; Qiao, Jingsi; Yu, Zhihao; Yu, Peng; Xu, Kang; Lau, Shu Ping; Zhou, Wu; Liu, Zheng; Wang, Xinran; Ji, Wei; Chai, Yang
• Is Part Of: Advanced materials. Volume 29:Issue 5(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-11-25
• Subjects: 2D layered materials -- electronic structure -- mobility -- PtSe2 -- transition metal dichalcogenides; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201604230
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : The electrical and optical measurements, in combination with density functional theory calculations, show distinct layer‐dependent semiconductor‐to‐semimetal evolution of 2D layered PtSe2 . The high room‐temperature electron mobility and near‐infrared photo­response, together with much better air‐stability, make PtSe2 a versatile electronic 2D layered material.