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HARVARD Citation
Lu, W. et al. (2017). Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3. RSC advances. 7 (14), pp. 8090-8097. [Online].
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Lu, W. et al. (2017). Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3. RSC advances. 7 (14), pp. 8090-8097. [Online].