Highly thermally conductive POSS-g-SiCp/UHMWPE composites with excellent dielectric properties and thermal stabilities. (November 2015)

• Record Type: Journal Article
• Authors: Gu, Junwei; Guo, Yongqiang; Lv, Zhaoyuan; Geng, Wangchang; Zhang, Qiuyu
• Is Part Of: Composites. Volume 78(2015)
• Page Start: 95
• Page End: 101
• Publication Date: 2015-11
• Subjects: A. Polymer-matrix composites (PMCs) -- B. Thermal properties -- D. Mechanical testing -- E. Compression moulding; Composite materials -- Periodicals; Manufacturing processes -- Periodicals; Composite materials; Manufacturing processes; Periodicals; 620.11805
• DOI: 10.1016/j.compositesa.2015.08.004
• Languages: English
• ISSNs: 1359-835X

Abstract

Abstract: Polyhedral oligomeric silsesquioxane grafting thermally conductive silicon carbide particle (POSS-g-SiCp) fillers, are performed to fabricate highly thermally conductive ultra high molecular weight polyethylene (UHMWPE) composites combining with optimal dielectric properties and excellent thermal stabilities, via mechanical ball milling followed by hot-pressing method. The POSS-g-SiCp/UHMWPE composite with 40 wt% POSS-g-SiCp exhibits relative higher thermal conductivity, lower dielectric constant and more excellent thermal stability, the corresponding thermally conductive coefficient of 1.135 W/mK, the dielectric constant of 3.22, and the 5 wt% thermal weight loss temperature of 423 °C, which holds potential for packaging and thermal management in microelectronic devices. Agari's semi-empirical model fitting reveals POSS-g-SiCp fillers have strong ability to form continuous thermally conductive networks.