Temperature dependent fracture initiation in microscale silicon. (15th March 2017)

• Record Type: Journal Article
• Authors: Hintsala, Eric D.; Bhowmick, Sanjit; Yueyue, Xie; Ballarini, Roberto; Asif, S. A. Syed; Gerberich, William W.
• Is Part Of: Scripta materialia. Number 130(2017)
• Page Start: 78
• Page End: 82
• Publication Date: 2017-03-15
• Subjects: Silicon -- Fracture -- Brittle-to-ductile transition -- Nanomechanical testing -- Electron microscopy; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2016.11.016
• Languages: English
• ISSNs: 1359-6462

Abstract

Abstract: We present novel in-situ scanning electron microscope experiments exploring the fracture of silicon as a function of temperature at the microscale, from room temperature to 600 °C. Clear post mortem TEM observations of dislocation activity at and above 450 °C suggest that back stresses from crack-tip dislocation emission raise the applied stress intensity at initiation, as part of a brittle to ductile transition starting at 300 °C. This is in agreement with other microscale measurements; however, these experiments are particularly noteworthy in their ability to directly observe crack advance and perform post-mortem analysis to investigate dislocation activity. Graphical abstract: