Solution-processed copper oxide interlayers for broadband PbS quantum-dot photodiodes. Issue 47 (16th November 2016)

• Record Type: Journal Article
• Authors: Yu, Hyeonggeun; Liu, Shyui; Baek, Sujin; Kim, Do Young; Dong, Chen; So, Franky
• Is Part Of: Journal of materials chemistry. Volume 4:Issue 47(2016)
• Page Start: 11205
• Page End: 11211
• Publication Date: 2016-11-16
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c6tc03531k
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : Metal oxide interlayers are promising for optoelectronic applications due to solution processability, optical transparency, and excellent charge blocking properties. Abstract : Metal oxide interlayers are promising for optoelectronic applications due to solution processability, optical transparency, and excellent charge blocking properties. Highly efficient, air-stable quantum dot photodetectors have been reported using solution-processed metal oxide interlayers. However, the processing temperatures are high, significantly limiting their potential for roll-to-roll processing. Here, we report low temperature-processed broadband PbS quantum dot photodiodes by employing a solution-processed CuO x interlayer. The resulting photodiodes exhibit a low dark current of 10 nA cm −2 with a detectivity over 10 13 Jones. Finally, we demonstrate a flexible inorganic photodiode on a polyethylene terephthalate substrate.