Influence of defect states and fixed charges located at the a-Si:H/c-Si interface on the performance of HIT solar cells. (1st January 2017)

• Record Type: Journal Article
• Authors: Oppong-Antwi, Louis; Huang, Shihua; Li, Qiannan; Chi, Dan; Meng, Xiuqing; He, Lv
• Is Part Of: Solar energy. Volume 141(2017)
• Page Start: 222
• Page End: 227
• Publication Date: 2017-01-01
• Subjects: Simulation -- Interface defect state -- Interface fixed charge -- a-Si:H/c-Si hetero-junction solar cell; Solar energy -- Periodicals; Solar engines -- Periodicals; 621.47
• DOI: 10.1016/j.solener.2016.11.049
• Languages: English
• ISSNs: 0038-092X

Abstract

Highlights: Efficiency of 29.19% in bifacial HIT solar cell was first achieved by simulation. Defect states and fixed charges at a-Si:H/p-Si interface were considered. Band bending dependent on interface defect states and fixed charges was confirmed. Abstract: In this work, a simulation study of various HIT solar cell structures was carried out using AFORS-HET simulation software. The effect of defect states and fixed charges at the a-Si:H/p-Si interface on the solar cell performance was investigated. We found that the defect states located at the upper side of the a-Si:H/p-c-Si interface affected the HIT performance more greatly than those located at the bottom side of the a-Si:H/p-c-Si interface. However, compared with interface defect states, interface fixed charges located on both sides of the c-Si wafer had an opposite effect. The crucial role of strong band bending in the crystalline part of the a-Si:H/c-p-Si interface was shown through the variation of interface defect states and interface fixed charges. By optimizing the densities of interface defect states and interface fixed charges, an efficiency of 29.19% was achieved.