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HARVARD Citation
Yan, L. et al. (2016). Influence of in-situ SiNx mask on the quality of N-polar GaN films. Materials science in semiconductor processing. pp. 35-39. [Online].
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Yan, L. et al. (2016). Influence of in-situ SiNx mask on the quality of N-polar GaN films. Materials science in semiconductor processing. pp. 35-39. [Online].