RF stability performance of SOI junctionless FinFET and impact of process variation. (January 2017)

• Record Type: Journal Article
• Authors: Jegadheesan, V.; Sivasankaran, K.
• Is Part Of: Microelectronics journal. Volume 59(2016)
• Page Start: 15
• Page End: 21
• Publication Date: 2017-01
• Subjects: Junctionless transistor -- Process variation -- Stability factor -- Cut-off frequency -- Maximum oscillation frequency; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2016.11.004
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: In this paper we investigate the impact of process parameter variations such as temperature (T), channel doping concentration (ND ), Fin height (Hfin ) and Fin width (Wfin ) on Radio Frequency (RF) stability performance of 20 nm Silicon on Insulator Junctionless FinFET (SOI JLFinFET). The developed RF stability model provides relation between critical frequency (fk ) and small signal parameters which can be optimized for improved stability. Results shows as temperature increases (27–200 °C) cutoff frequency (fT ) and maximum oscillation frequency (fmax ) reduced by 12% and 8% respectively also stability factor (K) decreases by 20% at high frequency. Increasing ND, Hfin and Wfin increases fT and fmax but degrades stability performance. The result also provides optimized design guideline for operating SOI JLFinFET under RF range.