Cite
HARVARD Citation
Šimonka, V. et al. (2017). Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation. Solid-state electronics. pp. 135-140. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Šimonka, V. et al. (2017). Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation. Solid-state electronics. pp. 135-140. [Online].