Computer simulations of X‐ray six‐beam diffraction in a perfect silicon crystal. II. Issue 1 (1st January 2017)

• Record Type: Journal Article
• Authors: Kohn, V. G.
• Is Part Of: Acta crystallographica. Volume 73:Issue 1(2017:Jan.)
• Page Start: 30
• Page End: 38
• Publication Date: 2017-01-01
• Subjects: X‐ray diffraction -- silicon crystal -- six‐beam diffraction -- section topography -- computer simulations; Crystallography -- Periodicals; Condensed matter -- Periodicals; 548
• DOI: 10.1107/S2053273316017988
• Languages: English
• ISSNs: 2053-2733

Abstract

Abstract : Computer simulations of six‐beam (000, 220, 242, 044, −224, −202) X‐ray diffraction in a perfect silicon crystal of large thickness are performed. Both the plane‐wave angular dependence and the six‐beam section topographs are investigated. Abstract : This paper reports computer simulations of X‐ray six‐beam (000, 220, 242, 044, −224, −202) diffraction in a perfect silicon crystal of large thickness where the super‐transmission effect prevails, i.e. about 2 cm or more for an X‐ray photon energy of 8 keV. Both the plane‐wave angular dependence and the six‐beam section topographs, which are obtained in experiments with a two‐dimensional slit, are calculated. The angular dependence is computed by means of an eigenvalue problem in accordance with Ewald's theory. The section topographs are calculated by means of a fast Fourier transformation procedure from the angular to real space. It is shown that under the effect of X‐ray super‐transmission the quadrupole part of the photoelectric absorption as well as the Compton scattering give apparent contributions to the minimum absorption coefficient. Comparison of experimental and theoretical results by means of measuring the effective absorption coefficient is proposed. The section topographs for a thick crystal are asymmetric and polarization sensitive. These properties are explained through the angular dependence and the stationary phase method.