Cite
HARVARD Citation
Yoo, G. et al. (2017). Solution‐processed high‐k oxide dielectric via deep ultraviolet and rapid thermal annealing for high‐performance MoS2 FETs. Physica status solidi. 214 (1), p. n/a. [Online].
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Yoo, G. et al. (2017). Solution‐processed high‐k oxide dielectric via deep ultraviolet and rapid thermal annealing for high‐performance MoS2 FETs. Physica status solidi. 214 (1), p. n/a. [Online].