23.2% laser processed back contact solar cell: fabrication, characterization and modeling. (2nd December 2016)

• Record Type: Journal Article
• Authors: Dahlinger, Morris; Carstens, Kai; Hoffmann, Erik; Zapf‐Gottwick, Renate; Werner, Jürgen H.
• Is Part Of: Progress in photovoltaics. Volume 25:Number 2(2017)
• Page Start: 192
• Page End: 200
• Publication Date: 2016-12-02
• Subjects: high efficiency -- back contact -- IBC -- laser doping -- laser ablation -- simulation -- IV, free energy loss analysis; Solar cells -- Periodicals; Photovoltaic cells -- Periodicals; Solar power plants -- Periodicals; 621.31245
• DOI: 10.1002/pip.2854
• Languages: English
• ISSNs: 1062-7995

Abstract

Abstract: We describe the manufacturing process for interdigitated back contact back junction silicon solar cells based on laser processes, and present detailed results and analysis to our best cell efficiency of 23.24%. The manufacturing process features two laser doping steps, one for the boron doped emitter and one for the phosphorus doped back surface field. The saturation current densities of thermal oxide passivated laser doped regions are on par with furnace diffused silicon for high efficiency solar cells. Laser ablation locally defines the contact areas through the rear dielectric layer stack, and structures the rear aluminum metallization. The precision of the laser systems in conjunction with the optical setup yields line shaped doping traces with a width of 150 µm and a pitch below 500 µm. The measured optical and electrical properties of our solar cell agree well with 3D simulation results. The measured reflection, transmission, quantum efficiency and current voltage curves in dark and illuminated condition simultaneously agree well with simulation, based on the same data set, giving confidence in the result of a detailed free energy loss analysis. The bulk resistive and recombination losses are identified as the main loss contributors. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd. Abstract : We use two laser doping and two laser ablation steps to pattern the complex rear side doping and metallization to manufacture ICB solar cells. We achieve a certified efficiency 23.24% on n‐type Cz wafers. Optical and electrical modeling results are in good agreement with measured reflection, quantum efficiency and J/V curves. A free energy loss analysis reveals the bulk as the main loss contributor followed by the doped surfaces.