Photon‐Gated Spin Transistor. Issue 2 (31st October 2016)

• Record Type: Journal Article
• Authors: Li, Fan; Song, Cheng; Cui, Bin; Peng, Jingjing; Gu, Youdi; Wang, Guangyue; Pan, Feng
• Is Part Of: Advanced materials. Volume 29:Issue 2(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-10-31
• Subjects: manganite -- optical gates -- spin transistors; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201604052
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : A new type of spin transistor with an optical gate is proposed with partial exposure of the device, where spin scattering is enhanced under light illumination due to the photon‐induced minor spins. Consequently a reproducible transient gate operation of reisitance via optical methods is observed, as ascribed to the nature of spin excitation