Giant Rashba Splitting in Pb1–xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk. Issue 3 (17th November 2016)

• Record Type: Journal Article
• Authors: Volobuev, Valentine V.; Mandal, Partha S.; Galicka, Marta; Caha, Ondřej; Sánchez‐Barriga, Jaime; Di Sante, Domenico; Varykhalov, Andrei; Khiar, Amir; Picozzi, Silvia; Bauer, Günther; Kacman, Perla; Buczko, Ryszard; Rader, Oliver; Springholz, Gunther
• Is Part Of: Advanced materials. Volume 29:Issue 3(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-11-17
• Subjects: photoemission spectroscopy -- IV–VI semiconductors -- molecular beam epitaxy -- Rashba effect -- crystalline insulators; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201604185
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : The topological properties of lead‐tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping of epitaxial Pb1‐ x Sn x Te (111) films induces a giant Rashba splitting at the surface that can be tuned by the doping level. Tight binding calculations identify their origin as Fermi level pinning by trap states at the surface.