Sub‐50 nm Channel Vertical Field‐Effect Transistors using Conventional Ink‐Jet Printing. Issue 4 (18th November 2016)

• Record Type: Journal Article
• Authors: Baby, Tessy Theres; Rommel, Manuel; von Seggern, Falk; Friederich, Pascal; Reitz, Christian; Dehm, Simone; Kübel, Christian; Wenzel, Wolfgang; Hahn, Horst; Dasgupta, Subho
• Is Part Of: Advanced materials. Volume 29:Issue 4(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-11-18
• Subjects: composite solid polymer electrolytes -- current density -- ink‐jet printing -- porous semiconductors -- vertical field‐effect transistors; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201603858
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : A printed vertical field‐effect transistor is demonstrated, which decouples critical device dimensions from printing resolution. A printed mesoporous semiconductor layer, sandwiched between vertically stacked drive electrodes, provides <50 nm channel lengths. A polymer‐electrolyte‐based gate insulator infiltrates the percolating pores of the mesoporous channel to accumulate charge carriers at every semiconductor domain, thereby, resulting in an unprecedented current density of MA cm −2 .